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| 1SS356 Diodes Band switching diode 1SS356 !Applications High frequency switching !External dimensions (Units : mm) CATHODE MARK !Construction Silicon epitaxial planar 0.30.05 +0.2 0.7 -0.1 1.250.1 2.50.2 1.70.1 !Features 1) Small surface mounting type. (UMD2) 2) High reliability. 0.1+0.1 -0.05 ROHM : UMD2 EIAJ : SC - 76 JEDEC : SOD - 323 !Absolute maximum ratings (Ta=25C) Parameter DC reverse voltage DC forward current Junction temperature Storage temperature Symbol VR IF Tj Tstg Limits 35 100 125 -55~+125 Unit V mA C C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals Forward operating resistance Symbol VF IR CT rF Min. - - - - Typ. - - - - Max. 1.0 10 1.2 0.9 Unit V nA pF IF=10mA VR=25V VR=6V, f=1MHz IF=2mA, f=100MHz Conditions 1SS356 Diodes !Electrical characteristic curves (Ta=25C) 1 FORWARD CURRENT : IF(mA) 10.0 CAPACITANCE BETWEEN TERMINALS : CT (pF) 3 10m 1m 100 10 1 100n 0.4 REVERSE CURRENT : IR (nA) 100m 2 1.0 1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 0 10 20 30 40 50 0 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics FORWARD OPERATING RESISTANCE : rF () 1.0 f=100MHz 0.5 0.2 0 1 2 5 10 FORWARD CURRENT : IF (mA) Fig. 4 Forward operating resistance characteristics |
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